TO2520163C

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Product Name: TO2520163C

This TO2520163C product is a high-quality, durable, and versatile component designed for various electronic applications. It is a metal can hermetic semiconductor device, specifically a diode, which is a two-terminal electronic component that allows current to flow in one direction while blocking it in the opposite direction.

The TO2520163C diode is housed in a TO-252 package, a popular choice for its compact size and excellent thermal performance. The package has a flattened top, making it easy to mount on a printed circuit board (PCB). The diode itself is made of high-purity silicon material, ensuring reliable operation under various temperature and voltage conditions.

The TO2520163C diode features a forward voltage drop of approximately 1.2V at a forward current of 1A, making it suitable for a wide range of applications, from power electronics to signal processing. It has a maximum power dissipation rating of 2W, allowing it to handle moderate power levels without overheating.

The diode is hermetically sealed, meaning it is protected from the outside environment by a glass seal and metal can. This ensures that the device is resistant to moisture, dust, and other contaminants, ensuring long-term reliability and performance.

In terms of electrical characteristics, the TO2520163C diode has a maximum reverse voltage rating of 50V, which means it can withstand a reverse voltage without breaking down or getting damaged. It also has a maximum peak pulse rating of 200V, making it suitable for applications that require high-voltage pulses.

The TO2520163C diode is RoHS compliant, meaning it contains no harmful substances such as lead, mercury, and cadmium. It is also suitable for use in a wide temperature range, from -55 C to 125 C.

In summary, the TO2520163C diode is a reliable, high-performance component for various electronic applications. Its compact size, high power dissipation rating, and excellent thermal performance make it an ideal choice for many power and signal processing applications. Its hermetic sealing, RoHS compliance, and wide temperature range further enhance its reliability and versatility.

Product (TO2520163C) Description:

The TO2520163C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage applications. It is a power MOSFET with a drain-source voltage rating of 100V.

Pros of Buying TO2520163C:

1. High Current Capability: This MOSFET can handle up to 65A of continuous current, making it suitable for high-power applications such as motors, LED drivers, and power supplies.

2. High Voltage Rating: With a drain-source voltage rating of 100V, it can withstand high voltages, which is essential for power electronics.

3. Compact Size: Despite its high power handling capabilities, the TO2520163C has a small TO-252 package, making it easy to integrate into various designs.

4. Low On-Resistance: This MOSFET has a low on-resistance, which helps to minimize power loss and improve energy efficiency.

5. Wide Temperature Range: The TO2520163C can operate in a wide temperature range (-40 C to 125 C), making it suitable for various environmental conditions.

Cons of Buying TO2520163C:

1. High Cost: Due to its high-power handling capabilities, the TO2520163C is more expensive than lower-power MOSFETs.

2. Limited Gate Drive Capability: The TO2520163C's gate drive capability is limited, which may require additional gate drivers or level shifters to drive it.

3. Sensitive to Overvoltage: This MOSFET is sensitive to overvoltage, which can lead to damage if not properly protected.

Conclusion:

The TO2520163C is a high-power, high-voltage N-channel MOSFET that is suitable for various power electronics applications. Its high current handling capability, high voltage rating, and small package size make it an attractive option for many designers. However, its high cost, limited gate drive capability, and sensitivity to overvoltage are important considerations. Ultimately, the decision to buy the TO2520163C should be based on the specific requirements of the application and the trade-offs between cost, performance, and reliability.

Recommendation:

If you require a high-power, high-voltage MOSFET for your application and can afford the higher cost, the TO2520163C is a good choice due to its high current handling capability, high voltage rating, and small package size. If cost is a concern, you may want to consider lower-power MOSFETs or alternative technologies such as IGBTs or MOSFET drivers. It is also essential to properly protect the MOSFET from overvoltage and ensure that it is driven correctly to ensure its longevity and reliability.

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